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1

Laser slicing: A thin film lift-off method for GaN-on-GaN technology

Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Zubrilov, Andrey, Kogotkov, Viktor, Latyshev, Philipp, Lelikov, Yuri, Leonidov, Andrey, Shreter, Yuri

Journal:

Results in Physics

Year:

2019

Language:

english

File:

PDF, 1005 KB

english, 2019

2

Optically Transparent 6H-Silicon Carbide

Bakin, Andrey S., Dorozhkin, Sergey I., Zubrilov, A.S., Kuznetsov, N.I., Tairov, Yuri M.

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 430 KB

1998

3

Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth

Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri

Journal:

physica status solidi (a)

Year:

2019

File:

PDF, 3.76 MB

2019

4

Characterization of 2.5-Inch Diameter Bulk GaN Grown from Melt-Solution

V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 119 KB

english, 2001

5

Properties of Si-Doped GaN Layers Grown by HVPE

A.V. Fomin, A.E. Nikolaev, I.P. Nikitina, A.S. Zubrilov, M.G. Mynbaeva, N.I. Kuznetsov, A.P. Kovarsky, B.Ja. Ber, D.V. Tsvetkov

Journal:

physica status solidi (a)

Year:

2001

Language:

english

File:

PDF, 103 KB

english, 2001

6

Growth and characterization of GaN layers on SiC substrates

V. Dmitriev, K. Irvine, G. Bulman, J. Edmond, A. Zubrilov, V. Nikolaev, I. Nikitina, D. Tsvetkov, A. Babanin, A. Sitnikova, Yu. Musikhin, N. Bert

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 409 KB

english, 1996

7

Picosecond time-resolved reflectivity of porous silicon

A.A. Bugayev, A. Khakhaev, A.S. Zubrilov

Journal:

Optics Communications

Year:

1994

Language:

english

File:

PDF, 338 KB

english, 1994

8

Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

N.I. Kuznetsov, A.S. Zubrilov

Journal:

Materials Science and Engineering: B

Year:

1995

Language:

english

File:

PDF, 255 KB

english, 1995

9

Investigation of n-GaN/p-SiC/n-SiC heterostructures

A.A. Lebedev, O.Yu. Ledyaev, A.M. Strel’chuk, A.N. Kuznetsov, A.E. Nikolaev, A.S. Zubrilov, A.A. Volkova

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 171 KB

english, 2007

10

Effect of ion doping on the electrical and luminescent properties of 4H-SiC epitaxial p-n junctions

E.V. Kalinina, G.F. Kholujanov, A.S. Zubrilov, D.V. Tsvetkov, M.P. Vatnik, V.A. Soloviev, V.D. Tretjakov, H. Kong, V.A. Dmitriev

Journal:

Materials Science and Engineering: B

Year:

1997

Language:

english

File:

PDF, 349 KB

english, 1997

11

Waveguide properties of gallium, aluminum, and indium nitride heterostructures

V. E. Bugrov, A. S. Zubrilov

Journal:

Year:

1997

Language:

english

File:

PDF, 70 KB

english, 1997

12

Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy

A. S. Zubrilov, Yu. V. Melnik, A. E. Nikolaev, M. A. Jacobson, D. K. Nelson, V. A. Dmitriev

Journal:

Year:

1999

Language:

english

File:

PDF, 70 KB

english, 1999

13

Electrical properties ofn-GaN/p-SiC heterojunctions

O. Yu. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, A. A. Lebedev

Journal:

Year:

2005

Language:

english

File:

PDF, 51 KB

english, 2005

14

White electroluminescence from ZnO/GaN structures

I. E. Titkov, A. S. Zubrilov, L. A. Delimova, D. V. Mashovets, I. A. Liniĭchuk, I. V. Grekhov

Journal:

Year:

2007

Language:

english

File:

PDF, 230 KB

english, 2007

15

Study of the 3C-SiC layers grown on the 15R-SiC substrates

A. A. Lebedev, P. L. Abramov, E. V. Bogdanova, A. S. Zubrilov, S. P. Lebedev, D. K. Nelson, N. V. Seredova, A. N. Smirnov, A. S. Tregubova

Journal:

Year:

2009

Language:

english

File:

PDF, 230 KB

english, 2009

16

Effect of the electric field on the intensity and spectrum of emission from InGaN/GaN quantum wells

N. I. Bochkareva, A. L. Bogatov, R. I. Gorbunov, F. E. Latyshev, A. S. Zubrilov, A. I. Tsyuk, A. V. Klochkov, Y. S. Lelikov, Y. T. Rebane, Y. G. Shreter

Journal:

Year:

2009

Language:

english

File:

PDF, 230 KB

english, 2009

17

Mechanism of the GaN LED efficiency falloff with increasing current

N. I. Bochkareva, V. V. Voronenkov, R. I. Gorbunov, A. S. Zubrilov, Y. S. Lelikov, F. E. Latyshev, Y. T. Rebane, A. I. Tsyuk, Y. G. Shreter

Journal:

Year:

2010

Language:

english

File:

PDF, 213 KB

english, 2010

18

Luminescent properties of GaN-based epitaxial layers and heterostructures grown on porous SiC substrates

K. D. Mynbaev, M. G. Mynbaeva, A. S. Zubrilov, N. V. Seredova

Journal:

Technical Physics Letters

Year:

2007

Language:

english

File:

PDF, 172 KB

english, 2007

19

Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

A. A. Lebedev, P. L. Abramov, A. S. Zubrilov, E. V. Bogdanova, S. P. Lebedev, N. V. Seredova, A. S. Tregubova

Journal:

Technical Physics Letters

Year:

2010

Language:

english

File:

PDF, 1000 KB

english, 2010

20

Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density

Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

Journal:

Year:

2012

Language:

english

File:

PDF, 386 KB

english, 2012

21

Two modes of HVPE growth of GaN and related macrodefects

Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.

Journal:

physica status solidi (c)

Year:

2013

Language:

english

File:

PDF, 302 KB

english, 2013

22

ZnO/GaN heterostructure for LED applications

Titkov, I.E., Delimova, L.A., Zubrilov, A.S., Seredova, N.V., Liniichuk, I.A., Grekhov, I.V.

Journal:

Journal of Modern Optics

Year:

2009

Language:

english

File:

PDF, 1.31 MB

english, 2009

23

Optical confinement and threshold currents in IIIâV nitride heterostructures: Simulation

Bougrov, V. E., Zubrilov, A. S.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 408 KB

english, 1997

24

Nature of V-Shaped Defects in GaN

Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philipp, Lelikov, Yuri, Rebane, Yury, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 612 KB

english, 2013

25

[AEA Technol Third European Conference on High Temperature Electronics - Berlin, Germany (4-7 July 1999)] HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372) - Electrical and optical properties of Mg ion implanted GaN p-n junctions

Kalinina, E.V., Zubrilov, A.S., Strel'chuk, A.M., Solov'ev, V.A., Dmitriev, V.A.

Year:

1999

Language:

english

File:

PDF, 267 KB

english, 1999

26

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Thick GaN Films Grown on Patterned Sapphire Substrates

Voronenkov, Vladislav, Gorbunov, Ruslan, Tsyuk, Alexander, Latyshev, Philippe, Lelikov, Yuriy, Rebane, Yuriy, Zubrilov, Andrey, Bochkareva, Natalia, Shreter, Yuriy

Year:

2011

Language:

english

File:

PDF, 10 KB

english, 2011

27

Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

Kalinina, E., Kholujanov, G., Zubrilov, A., Solov’ev, V., Davydov, D., Tregubova, A., Sheglov, M., Kovarskii, A., Yagovkina, M., Violina, G., Pensl, G., Hallén, A., Konstantinov, A., Karlsson, S., Re

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 690 KB

english, 2001

28

[IEEE Compound Semiconductors 1997. IEEE Twenty-Fourth International Symposium on Compound Semiconductors - San Diego, CA, USA (8-11 Sept. 1997)] Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors - GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

Antipov, V.G., Guriev, A.I., Elyukhin, V.A., Faleev, N.N., Kudriavtsev, Yu.A., Lebedev, A.B., Shubina, T.V., Zubrilov, A.S., Nikishin, S.A., Temkin, H.

Year:

1998

Language:

english

File:

PDF, 274 KB

english, 1998

29

AlGaN pn junctions

Dmitriev, V. A., Irvine, K., Carter, C. H., Zubrilov, A. S., Tsvetkov, D. V.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 314 KB

english, 1995

30

High-dose Al-implanted 4H-SiC p[sup +]-n-n[sup +] junctions

Kalinina, E., Kholujanov, G., Solov’ev, V., Strel’chuk, A., Zubrilov, A., Kossov, V., Yafaev, R., Kovarski, A. P., Hallén, A., Konstantinov, A., Karlsson, S., Adås, C., Rendakova, S., Dmitriev, V.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 379 KB

english, 2000

31

Optical properties of GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia

Zubrilov, A. S., Nikishin, S. A., Kipshidze, G. D., Kuryatkov, V. V., Temkin, H., Prokofyeva, T. I., Holtz, M.

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 297 KB

english, 2002

32

Growth of AlGaN on Si(111) by gas source molecular beam epitaxy

Nikishin, S. A., Faleev, N. N., Zubrilov, A. S., Antipov, V. G., Temkin, H.

Journal:

Applied Physics Letters

Year:

2000

Language:

english

File:

PDF, 275 KB

english, 2000

33

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

Journal:

Applied Physics Letters

Year:

2010

Language:

english

File:

PDF, 595 KB

english, 2010

34

[IEEE LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference - San Francisco, CA, USA (30-31 Oct. 1995)] LEOS '95. IEEE Lasers and Electro-Optics Society 1995 Annual Meeting. 8th Annual Meeting. Conference Proceedings - Recent progress in GaN/SiC LEDs and photopumped lasers

Bulman, G.E., Edmond, J.A., Kong, H.S., Leonard, M., Dmitriev, V.A., Irvine, K.G., Nikolaev, V.I., Zubrilov, A.S., Tsvetkov, D.V.

Year:

1995

Language:

english

File:

PDF, 174 KB

english, 1995

35

Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates

Nikishin, S. A., Temkin, H., Antipov, V. G., Guriev, A. I., Zubrilov, A. S., Elyukhin, V. A., Faleev, N. N., Kyutt, R. N., Chin, A. K.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 439 KB

english, 1998

36

[IEEE 2012 IEEE 9th International Multi-Conference on Systems, Signals and Devices (SSD) - Chemnitz, Germany (2012.03.20-2012.03.23)] International Multi-Conference on Systems, Sygnals & Devices - Universal hardware and software package for electronic spectroscopy

Zubrilov, V. G., Djudjun, D. E., Valyukhov, D. P., Dunaenko, Y. S.

Year:

2012

Language:

english

File:

PDF, 449 KB

english, 2012

37

[IEEE 1998 Fourth International High Temperature Electronics Conference. HITEC - Albuquerque, NM, USA (14-18 June 1998)] 1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145) - 6H- and 4H-silicon carbide for device applications

Bakin, A.S., Dorozhkin, S.I., Zubrilov, A.S.

Year:

1998

Language:

english

File:

PDF, 423 KB

english, 1998

38

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, Evgenia V., Zubrilov, A.S., Solov'ev, V., Kuznetsov, N.I., Hallén, Anders, Konstantinov, Andrey O., Karlsson, S., Rendakova, S.V., Dmitriev, Vladimir

Journal:

Materials Science Forum

Year:

2000

Language:

english

File:

PDF, 431 KB

english, 2000

39

Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

Lebedev, A.A., Ledyaev, O. Yu., Strel'chuk, Anatoly M., Kuznetsov, Alexey N., Cherenkov, A.E., Nikolaev, A.E., Zubrilov, A.S., Seredova, N.V., Volkova, A.A.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 273 KB

english, 2006

40

Electrical and Optical Study of 4H-SiC CVD Epitaxial Layers Irradiated with Swift Heavy Ions

Kalinina, Evgenia V., Kholuyanov, G., Onushkin, G., Davydov, D.V., Strel'chuk, Anatoly M., Zubrilov, A.S., Hallén, Anders, Konstantinov, Andrey O., Skuratov, V.A., Staňo, J.

Journal:

Materials Science Forum

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

41

Vemurafenib resistance selects for highly malignant brain and lung-metastasizing melanoma cells

Zubrilov, Inna, Sagi-Assif, Orit, Izraely, Sivan, Meshel, Tsipi, Ben-Menahem, Shlomit, Ginat, Ravit, Pasmanik-Chor, Metsada, Nahmias, Clara, Couraud, Pierre-Olivier, Hoon, Dave S.B., Witz, Isaac P.

Journal:

Year:

2015

Language:

english

File:

PDF, 3.81 MB

english, 2015

42

Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC

Kalinina, Evgenia V., Zubrilov, A.S., Kuznetsov, N.I., Nikitina, Irina P., Tregubova, A.S., Shcheglov, M.P., Bratus, V.Ya.

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 360 KB

2000

43

4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

Kuznetsov, N.I., Morozov, A., Bauman, D., Ivantsov, V., Sukhoveyev, V., Nikitina, Irina P., Zubrilov, A.S., Rendakova, S.V., Dmitriev, Vladimir, Hofman, D., Vida, György

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 289 KB

2000

44

Growth of SiC and GaN on Porous Buffer Layers

Mynbaeva, M.G., Savkina, N.S., Tregubova, A.S., Scheglov, M.P., Lebedev, A.A., Zubrilov, A.S., Titkov, A., Kryganovski, A., Mynbaev, K., Seredova, N.V., Tsvetkov, D., Stepanov, S., Cherenkov, A.E., Ko

Journal:

Materials Science Forum

Year:

2000

File:

PDF, 341 KB

2000

45

ECS Transactions [ECS 219th ECS Meeting - Montreal, QC, Canada (May 1 - May 6, 2011)] - Effect of Growth Parameters on Stress in HVPE GaN Films

Tsyuk, Alexander, Gorbunov, Ruslan, Voronenkov, Vladislav, Lelikov, Yuriy, Latyshev, Philippe, Zubrilov, Andrey, Rebane, Yuriy, Bochkareva, Natalia, Shreter, Yuriy

Year:

2011

Language:

english

File:

PDF, 1.92 MB

english, 2011

46

On Application of Sublimation Epitaxy to Growth of Bulk 3C-SiC Crystals

Lebedev, Alexander A., Abramov, Pavel L., Zubrilov, A.S., Bogdanova, Elena V., Lebedev, Sergey P., Seredova, N.V., Tregubova, Alla S.

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 471 KB

english, 2011

47

Gas source molecular beam epitaxy of high quality Al[sub x]Ga[sub 1−x]N (0≤x≤1) on Si(111)

S. Nikishin, G. Kipshidze, V. Kuryatkov, K. Choi, I. Gherasoiu, L. Grave De Peralta, A. Zubrilov, V. Tretyakov, K. Copeland, T. Prokofyeva, M. Holtz, R. Asomoza, Y. Kudryavtsev, H. Temkin

Year:

2001

Language:

english

File:

PDF, 534 KB

english, 2001

48

High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia

Nikishin, Sergey A., Faleev, Nikolai N., Antipov, Vladimir G., Francoeur, Sebastien, Peralta, Luis Grave de, Seryogin, George A., Holtz, Mark, Prokofyeva, Tat'yana I., Chu, S. N. G., Zubrilov, Andrei

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 199 KB

english, 1999

49

GaN Three Dimensional Nanostructures

Dmitriev, V., Irvine, K., Zubrilov, A., Tsvetkov, D., Nikolaev, V., Jakobson, M., Nelson, D., Sitnikova, A.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 1.36 MB

english, 1995

50

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

Melnik, Yu. V., Nikolaev, A. E., Stepanov, S. I., Zubrilov, A. S., Nikitina, I. P., Vassilevski, K. V., Tsvetkov, D. V., Babanin, A. I., Musikhin, Yu. G., Tretyakov, V. V., Dmitriev, V. A.

Journal:

MRS Proceedings

Year:

1997

Language:

english

File:

PDF, 976 KB

english, 1997

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